np0ta series low capacitance protector the np series of low volta ge/low capacitance overvoltage protection devices protect high speed xdsl line drivers and chipsets from both lightning surge and esd events. the devices are designed with a low nominal capacitance as well as extremely low differential capacitance across frequency and voltage. the inherent low off ? state leakage current provides superior performance in low voltage high speed applications. these characteristics allow protection of the system without distortion of the high speed data signal. with it?s advanced silicon structure the np product is able to clamp very fast esd events, and crowbar high energy surge events to help protect sensitive ic?s all in a small footprint. the convenient flow thru design minimizes trace routing while maximizing circuit performance. the np series of low voltage/low capacitance devices helps designers to comply with the various regulatory standards and recommendations including: gr ? 1089 ? core, iec 61000 ? 4 ? 5, itu k.20/k.21/k.45, iec 60950, tia ? 968 ? a, fcc part 68, en 60950, ul 1950. features ? low nominal capacitance ? extremely low differential capacitance ? low leakage (transparent) ? high surge capability ? precise clamping voltage ? small package size ? bi ? directional operation ? flow thru layout ? iec 61000 ? 4 ? 2 level 4 esd protection ? these are pb ? free devices typical applications ? vdsl, adsl, access, central office, and customer premise modems and gateway ic side line driver chipset protection ? 10/100/1000 ethernet protection ? rs ? 232, rs ? 485 t ransceiver protection electrical characteristics device v rwm v br i r @ v r =v rwm c@ v r = 2 v c 0 v ? v rwm (v) (v) ( a) (pf) (pf) NP0080TAT1G 8 9.5 0.5 13 4 np0120tat1g 12 12.5 0.5 11 3 np0160tat1g 16 18 0.5 11 3 surge/esd ratings waveform 8x20 a esd air esd contact value 50 a 15 kv 8 kv pin connections 1 3 2 4 5 (top view) marking diagram 1 5 xxa = specific device code (np0xx0tat1g) d = date code = pb ? free package tsop ? 5 sn suffix case 483 (note: microdot may be in either location) see detailed ordering and shipping information in the package dimensions sect ion on page 4 of this data sheet. ordering information 1 5 xxa d product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics table (t a = 25 c unless otherwise noted) symbol rating min typ max unit v rwm repetitive peak off ? state voltage : rated maximum (peak) continuous voltage that may be applied in the off ? state condition NP0080TAT1G 8 v np0120tat1g 12 np0160tat1g 16 v br1 breakdown voltage : the minimum voltage across the device in or at the breakdown region. measured at i br = 1 ma NP0080TAT1G 9.5 v np0120tat1g 12.5 np0160tat1g 18 v (bo) breakover voltage : the maximum voltage across the device in or at the breakover region. measured at i (bo) = 800 ma NP0080TAT1G 20 v np0120tat1g 30 np0160tat1g 40 i r off ? state current : the dc value of current that results from the application of the off ? state voltage 0.5 a i h holding current : the minimum current required to maintain the device in the on ? state. 50 ma co off ? state capacitance : f = 1.0 mhz, v d = 1.0 vrms, v d = ? 2 vdc NP0080TAT1G 13 pf np0120tat1g 11 np0160tat1g 11 c 1 capacitance : f = 1.0 mhz, v d = 1.0 vrms, v d = | 0 v ? vrwm| NP0080TAT1G 4 pf np0120tat1g 3 np0160tat1g 3 ipps peak pulse current : rated maximum value of peak impulse pulse current that may be applied. 8x20 s, iec 61000 4 5 50 a esd electrostatic discharge : rated maximum value of esd per iec ? 61000 ? 4 ? 2 contact 8 kv air 15 t stg storage temperature range ? 55 +150 c t j operating junction temperature range ? 40 +125 c product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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